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Thursday, 27 October 2016

70/40 Watts Hi-Fi intensifier



70/40 Watts Hi-Fi intensifier
Here is a circuit of the world best Hi-Fi intensifier you may never need to supplant by a superior one. The high yield, great detail, and little size make this 70/40 watts hello fi speaker more flexible. Circuit portrayal of 70/40 watts hey fi intensifier The 70/40 watts hey fi intensifier circuit is work around transistors, arranged in different modes. The flag to be opened up is given to base of transistor T1 designed as differential intensifier with T2. Transistor T3 is utilized to keep up the current of differential enhancer. Transistor T4 with T5 frames a fell match inferred specifically by transistor T1. 


  
For better result transistor T6 and T7 again designed as fell match and give steady current source to course match T4 and T5 in this intensifier circuit. Temperature coefficient of transistors T10 and T11 is repaid by transistors T8 and T9 which act like diodes. Transistors T10 with T12 and T14 and transistors T11 with T13 and T15 frame a triple Darlington sets. The current through T4 and T5 is kept at a low estimation of around 6mA on the grounds that the yield of this circuit comprises of triple Darlington sets. The little change in the VBE of T10 and T11 changes yield current of howdy  enhancer enormously. Keeping in mind the end goal to anticipate twisting in the 70/40 watts  enhancer when capacitive burdens are associated with the yield, loop L1 is utilized. Circuit is utilized to counteract DC voltage over the speaker also, is associated in arrangement to speaker. The aggregate pick up of this intensifier circuit is estimated 32 also, is esteem is computed by (R7 + R8)/R8 

PARTS LIST
Resistors (all ¼-watt, ± 5% Carbon)
R1, R7 = 100 Kω; R2, R3, R9 = 1.2 Kω; R4, R5, R6 = 2.7 Kω/2W; R8 = 4.7 Kω R10, R13, R16, R18, R19 = 100 Ω; R11 = 3.3 Kω; R12, R17 = 680 Ω R14, R15, R22, R23, R24, R25 = 1 Ω/2W; R20 = 10 Ω/2W; R21 = 1o Ω/1W; VR1 = 100 Ω 

Capacitors
C1 = 1 μF/polyester; C2, C3 = 25 μF/25V electrolytic; C4, C8, C9 = o.1 μF polyester C5 = 10 μF/60V electrolytic; C6 = 4.7 μF/10V electrolytic; C7 = 56 pF earthenware plate 

Semiconductors
T1, T2, T3 = BC546B; T4 = BC558B; T5, T11 = 2N4033; T6, T10 = 2N3019; T7 = BC548B T8, T9 = BC147B; T12 = BD140; T13 = BD139; T14 = 2N3055; T15 = MJ2955 ZD1 = 3.3V 400mW zener diode; ZD2 = 3.9V, 400mW zener diode Random L1 = Coil having 20 turns of 20 SWG over thin pencil; F1 = 3.5 Ampere intertwine Details Yield control (1 KHz, o.7% THD): 73W into 4-Ω and 44W into 8-Ω Counterbalanced Voltage: Less than ±40mV; Input impedance: 100 Kω; Harmonic twisting : 0.015%; Inter modulation mutilation (70W): 0.02%; Frequency go: 10 Hz – 30 KHz, ±2dB; Signal-to noise proportion (out = 100mW): Over 72dB

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